PART |
Description |
Maker |
QM150EXY-XX |
Darlington Transistor Modules
|
Powerex
|
SQD400AA100 |
DARLINGTON TRANSISTOR MODULES Transistors Module From old datasheet system
|
SANREX[SanRex Corporation]
|
2N6533 2N6532 2N6530 2N6531 |
8 A N-P-N darlington power transistor. 120 V. 60 W. Gain of 1000 at 3 A. 8 A N-P-N darlington power transistor. 100 V. 60 W. Gain of 1000 at 5 A. 8 A N-P-N darlington power transistor. 100 V. 60 W. Gain of 500 at 3 A. 8 A N-P-N darlington power transistor. 80 V. 60 W. Gain of 1000 at 5 A. 8-AMPERE N-P-N DARLINGTON POWER TRANSISTORS From old datasheet system
|
General Electric Solid State ETC[ETC]
|
BU806 BU807 BU807TU |
NPN Epitaxial Silicon Darlington Transistor High Voltage & Fast Switching Darlington Transistor
|
FAIRCHILD[Fairchild Semiconductor]
|
2N999 ST640 ST646 FT359 |
TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 500MA I(C) | CAN TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 10A I(C) | TO-3 TRANSISTOR | BJT | DARLINGTON | PNP | 80V V(BR)CEO | 10A I(C) | TO-3 晶体管|晶体管|达林顿|进步党| 80V的五(巴西)总裁| 10A条一(c)|3 TRANSISTOR | BJT | DARLINGTON | NPN | 350V V(BR)CEO | 15A I(C) | TO-3
|
STMicroelectronics N.V.
|
CZT122 CZT127 |
SMD Bipolar Power Transistor PNP Darlington SMD Bipolar Power Transistor NPN Darlington SURFACE MOUNT COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR
|
Central Semiconductor Corp
|
CZTA14 CZTA64 |
SMD Small Signal Transistor NPN Darlington SMD Small Signal Transistor PNP Darlington SURFACE MOUNT COMPLEMENTARY SILICON DARLINGTON TRANSISTORS
|
CENTRAL[Central Semiconductor Corp]
|
2SD1592 2SD1592L |
Silicon transistor NPN SILICON TRIPLE DIFFUSED TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-VOLTAGE LOW-SPEED SWITCHING TRANSISTOR | BJT | DARLINGTON | NPN | 300V V(BR)CEO | 5A I(C) | SOT-186
|
NEC Corp.
|
CFD1025 |
35.000W Darlington NPN Plastic Leaded Transistor. 150V Vceo, 8.000A Ic, 1500 - 30000 hFE. NPN PLANAR POWER DARLINGTON TRANSISTOR
|
CDIL[Continental Device India Limited]
|
QM100HA-H QM100HY-H |
MITSUBISHI TRANSISTOR MODULES HIGH POWER SWITCHING USE INSULATED TYPE Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
2SD1630 2SD1630L |
TRANSISTOR | BJT | DARLINGTON | NPN | 70V V(BR)CEO | 1A I(C) | TO-126 晶体管|晶体管|达林顿|叩| 70V的五(巴西)总裁| 1A条一(c)|26 NPN SILICON DARLINGTON POWER TRANSISTOR
|
NEC
|
MMBT6427LT1 MMBT6427LT3 MMBT6427LT1-D MMBT6427LT1G |
Darlington Transistor NPN Silicon Small Signal Darlington Darlington Transistor(NPN Silicon)
|
ON Semiconductor
|